ROHM's SiC MOSFET Adopted for BBU in AI Servers Utilizing HVDC
ROHM Co., Ltd. (Kyoto) announced that its 750V SiC MOSFET, "SCT4013DLL," has been adopted for AI server battery backup units (BBU). It was chosen for its ability to support high-voltage power systems and HVDC architectures.
📋 Article Processing Timeline
- 📰 Published: May 21, 2026 at 19:00
- 🔍 Collected: May 21, 2026 at 10:31
- 🤖 AI Analyzed: May 21, 2026 at 21:30 (10h 58m after Collected)
ROHM Co., Ltd. (Headquarters: Kyoto) has announced that its 750V withstand voltage SiC MOSFETs have been adopted for Battery Backup Units (BBU) in AI server power supplies. As the adoption of generative AI accelerates, there is a push towards higher voltages and the migration to HVDC (High Voltage Direct Current) architectures for AI server power supplies, leading to the selection of SiC power devices to support these next-generation systems.
With the increased performance of GPUs following the spread of generative AI, data center power consumption is surging. To address this, the industry is transitioning to HVDC architectures to reduce power transmission losses. In such high-power, high-voltage environments, the roles of BBUs and CU (Capacitor Units) in compensating power at the server rack level are increasingly crucial to protect systems and vast amounts of data during outages or instantaneous voltage drops.
The adopted product, the 750V SiC MOSFET "SCT4013DLL," is installed in the power section of the ±400V power supply architecture for AI servers. Leveraging the properties of SiC, the product features a high heat resistance with a maximum junction temperature (Tj) of 175°C, enabling stable operation even in BBUs where heat generation increases with higher voltage and power density.
Furthermore, for the next-generation 800VDC power supply architecture, the supply voltage to the battery packs within the BBU is approximately 560V, allowing for the use of the same 750V withstand voltage model of ROHM's SiC MOSFET.
For next-generation AI server HVDC power supplies, a backup system capable of controlling high voltage and large currents instantaneously and with low loss during anomalies is required. SiC power devices, combining high withstand voltage, low loss, and high heat resistance, are expected to serve as key devices at the core of power control for these demanding requirements.
ROHM will continue to strengthen the development and supply of power devices using SiC, GaN, and silicon with an eye toward the growth of the AI server and data center market. Furthermore, through the proposal of solutions combining analog ICs, ROHM aims to contribute to improved power efficiency and the realization of a sustainable society.
With the increased performance of GPUs following the spread of generative AI, data center power consumption is surging. To address this, the industry is transitioning to HVDC architectures to reduce power transmission losses. In such high-power, high-voltage environments, the roles of BBUs and CU (Capacitor Units) in compensating power at the server rack level are increasingly crucial to protect systems and vast amounts of data during outages or instantaneous voltage drops.
The adopted product, the 750V SiC MOSFET "SCT4013DLL," is installed in the power section of the ±400V power supply architecture for AI servers. Leveraging the properties of SiC, the product features a high heat resistance with a maximum junction temperature (Tj) of 175°C, enabling stable operation even in BBUs where heat generation increases with higher voltage and power density.
Furthermore, for the next-generation 800VDC power supply architecture, the supply voltage to the battery packs within the BBU is approximately 560V, allowing for the use of the same 750V withstand voltage model of ROHM's SiC MOSFET.
For next-generation AI server HVDC power supplies, a backup system capable of controlling high voltage and large currents instantaneously and with low loss during anomalies is required. SiC power devices, combining high withstand voltage, low loss, and high heat resistance, are expected to serve as key devices at the core of power control for these demanding requirements.
ROHM will continue to strengthen the development and supply of power devices using SiC, GaN, and silicon with an eye toward the growth of the AI server and data center market. Furthermore, through the proposal of solutions combining analog ICs, ROHM aims to contribute to improved power efficiency and the realization of a sustainable society.
FAQ
What is the ROHM product adopted this time?
It is the 750V-rated SiC MOSFET 'SCT4013DLL'.
Why is a SiC MOSFET needed for the AI server's BBU?
To address the increased power demand due to the widespread adoption of generative AI, the transition to high-voltage HVDC architecture is advancing, and devices with high voltage tolerance, low loss, and high-temperature resistance are required.
What are the features of 'SCT4013DLL'?
It has a high temperature resistance with a maximum junction temperature (Tj) of 175°C, allowing stable operation even in high-voltage, high-power density BBUs.
Is it compatible with 800VDC power supply architecture?
Yes, since the battery pack's supply voltage is approximately 560V, the 750V-rated SCT4013DLL can be used.
What is ROHM's EcoSiC™ brand?
It is a brand of power devices using SiC (silicon carbide) material, with a vertically integrated production system from material to packaging.