ROHM's SiC MOSFET Adopted for BBU in AI Servers Utilizing HVDC
ROHM Co., Ltd. (Kyoto) announced that its 750V SiC MOSFET, "SCT4013DLL," has been adopted for AI server battery backup units (BBU). It was chosen for its ability to support high-voltage power systems and HVDC architectures.
📋 Article Processing Timeline
- 📰 Published: May 21, 2026 at 19:00
- 🔍 Collected: May 21, 2026 at 10:31
- 🤖 AI Analyzed: May 21, 2026 at 21:30 (10h 58m after Collected)
ROHM Co., Ltd. (Headquarters: Kyoto) has announced that its 750V withstand voltage SiC MOSFETs have been adopted for Battery Backup Units (BBU) in AI server power supplies. As the adoption of generative AI accelerates, there is a push towards higher voltages and the migration to HVDC (High Voltage Direct Current) architectures for AI server power supplies, leading to the selection of SiC power devices to support these next-generation systems.
With the increased performance of GPUs following the spread of generative AI, data center power consumption is surging. To address this, the industry is transitioning to HVDC architectures to reduce power transmission losses. In such high-power, high-voltage environments, the roles of BBUs and CU (Capacitor Units) in compensating power at the server rack level are increasingly crucial to protect systems and vast amounts of data during outages or instantaneous voltage drops.
The adopted product, the 750V SiC MOSFET "SCT4013DLL," is installed in the power section of the ±400V power supply architecture for AI servers. Leveraging the properties of SiC, the product features a high heat resistance with a maximum junction temperature (Tj) of 175°C, enabling stable operation even in BBUs where heat generation increases with higher voltage and power density.
Furthermore, for the next-generation 800VDC power supply architecture, the supply voltage to the battery packs within the BBU is approximately 560V, allowing for the use of the same 750V withstand voltage model of ROHM's SiC MOSFET.
For next-generation AI server HVDC power supplies, a backup system capable of controlling high voltage and large currents instantaneously and with low loss during anomalies is required. SiC power devices, combining high withstand voltage, low loss, and high heat resistance, are expected to serve as key devices at the core of power control for these demanding requirements.
ROHM will continue to strengthen the development and supply of power devices using SiC, GaN, and silicon with an eye toward the growth of the AI server and data center market. Furthermore, through the proposal of solutions combining analog ICs, ROHM aims to contribute to improved power efficiency and the realization of a sustainable society.
With the increased performance of GPUs following the spread of generative AI, data center power consumption is surging. To address this, the industry is transitioning to HVDC architectures to reduce power transmission losses. In such high-power, high-voltage environments, the roles of BBUs and CU (Capacitor Units) in compensating power at the server rack level are increasingly crucial to protect systems and vast amounts of data during outages or instantaneous voltage drops.
The adopted product, the 750V SiC MOSFET "SCT4013DLL," is installed in the power section of the ±400V power supply architecture for AI servers. Leveraging the properties of SiC, the product features a high heat resistance with a maximum junction temperature (Tj) of 175°C, enabling stable operation even in BBUs where heat generation increases with higher voltage and power density.
Furthermore, for the next-generation 800VDC power supply architecture, the supply voltage to the battery packs within the BBU is approximately 560V, allowing for the use of the same 750V withstand voltage model of ROHM's SiC MOSFET.
For next-generation AI server HVDC power supplies, a backup system capable of controlling high voltage and large currents instantaneously and with low loss during anomalies is required. SiC power devices, combining high withstand voltage, low loss, and high heat resistance, are expected to serve as key devices at the core of power control for these demanding requirements.
ROHM will continue to strengthen the development and supply of power devices using SiC, GaN, and silicon with an eye toward the growth of the AI server and data center market. Furthermore, through the proposal of solutions combining analog ICs, ROHM aims to contribute to improved power efficiency and the realization of a sustainable society.
FAQ
今回採用されたロームの製品は何ですか？
750V耐圧のSiC MOSFET「SCT4013DLL」です。
なぜAIサーバーのBBUにSiC MOSFETが必要なのですか？
生成AIの普及による電力需要の増大に対応するため、高電圧なHVDCアーキテクチャへの移行が進んでおり、高耐圧・低損失・高温耐性に優れたデバイスが求められているためです。
「SCT4013DLL」の特長は何ですか？
最大ジャンクション温度（Tj）175℃という高い温度耐性を備え、高電圧・高電力密度化するBBUでも安定した動作が可能です。
800VDC電力供給アーキテクチャにも対応していますか？
はい、バッテリーパックの電源電圧が約560Vであるため、同じく750V耐圧モデルのSCT4013DLLが使用可能です。
ロームのEcoSiC™ブランドとは何ですか？
SiC（シリコンカーバイド）素材を採用したパワーデバイスのブランドで、素材からパッケージングまでの一貫生産体制を構築しています。