Rohm Achieves Technology Goals for Green Innovation Fund Project Two Years Ahead of Schedule

　In the "Development of Next-Generation Power Semiconductor Device Manufacturing Technology (Subsidy Project)" under NEDO's Green Innovation Fund Project "Building Next-Generation Digital Infrastructure" (hereinafter referred to as "this project"), Rohm Corporation has achieved the technology goals for its "Development of 8-inch Next-Generation SiC MOSFET" two years ahead of the original plan.

　Rohm has established epitaxial growth technology and low on-resistance technology compatible with 8-inch SiC wafers, and has also constructed an 8-inch SiC device manufacturing line integrating these elemental technologies. As a result, it has achieved the project's technical goals of "reducing power loss by 50% or more in power converters, etc." and "cost reduction".

　Under the framework of this project, NEDO and Rohm have promoted the project with a view to social implementation from the research and development stage, accurately grasping the global market trends surrounding power semiconductors, as part of efforts towards early social implementation.

　In particular, recognizing the strong need to establish competitive technologies early in anticipation of future global demand growth for SiC power semiconductors, Rohm has aggressively advanced research and development, which led to the early achievement of the technology goals.

1．Background

　As part of the Green Innovation Fund Project, NEDO is promoting the "Building Next-Generation Digital Infrastructure" project, aiming to realize next-generation green power semiconductors, next-generation green data centers, and more.

　This project targets areas requiring innovative energy savings for carbon neutrality, such as electric vehicles (xEV*1), renewable energy, and server power supplies. It aims to enhance the performance and efficiency of next-generation power semiconductors (SiC, GaN), reduce power loss in converters and similar devices by over 50%, achieve cost reductions comparable to Si power semiconductors, and promote early adoption.

　Starting in April 2022, Rohm launched this project (project*4) with the theme of "Development of 8-inch Next-Generation SiC*2 MOSFET*3" within the "Development of Next-Generation Power Semiconductor Device Manufacturing Technology," a core theme of this project. It has now achieved its technology goals two years earlier than originally planned. This project will conclude in fiscal year 2025, with the aim of even earlier social implementation.

2．Achievements

(1) Construction of 8-inch SiC Device Manufacturing Line

　In this project, Rohm has achieved cost reduction for SiC, which is considered difficult to manufacture due to its high-temperature process requirements compared to Si, through the adoption of 8-inch wafers for larger diameters and process optimization. Concurrently, it established epitaxial growth*5 technology and low on-resistance technology compatible with 8-inch wafers. Furthermore, by overcoming various technical challenges associated with 8-inch production and SiC's inherently difficult processes, and integrating these elemental technologies, Rohm has constructed an 8-inch SiC device manufacturing line (hereinafter referred to as "this line") in a dedicated building at its Chikugo factory.

(2) Performance Verification of 8-inch SiC Devices

　By mounting the 8-inch SiC MOSFET devices manufactured on this line into Rohm's in-house modules and evaluating their power loss under operating conditions based on assumed inverter use, it was confirmed that power loss in power converters can be reduced by over 50% compared to conventional Si IGBT*6 devices, thus demonstrating the target performance.

　Towards stable supply to support widespread adoption, Rohm has continuously worked to improve challenges across the entire 8-inch SiC manufacturing process and ensure the stability and reliability required for social implementation. Through these efforts, Rohm has established a production base for 8-inch SiC power semiconductors and put a supply system in place. It continues to strengthen its supply capacity to meet growing demand.

3．Future Plans

　Looking ahead, Rohm will continue research and development for further cost reduction and power loss reduction based on its 8-inch SiC technology, anticipating the global expansion of power semiconductor demand.

　NEDO will accelerate social implementation towards achieving carbon neutrality by 2050, contributing to greenhouse gas emission reductions through the widespread adoption of next-generation green power semiconductors.

[Notes]

※1 xEV

This is a collective term for electrified vehicles, including Battery Electric Vehicles (BEV), Hybrid Electric Vehicles (HEV), Plug-in Hybrid Electric Vehicles (PHEV/PHV), and Fuel Cell Electric Vehicles (FCEV/FCV).

※2 SiC

Silicon Carbide (SiC) is a compound of carbon (C) and silicon (Si).

※3 MOSFET

Metal Oxide Semiconductor Field Effect Transistor (Insulated Gate Field-Effect Transistor).

※4 This Project

Project Name: Green Innovation Fund Project / Building Next-Generation Digital Infrastructure / Development of Next-Generation Power Semiconductor Device Manufacturing Technology / Development of 8-inch Next-Generation SiC MOSFET

Project Period: Fiscal Years 2022-2025

Project Overview: Green Innovation Fund Project / Building Next-Generation Digital Infrastructure Project

NEDO Green Innovation Fund Project Special Site: https://green-innovation.nedo.go.jp/

Building Next-Generation Digital Infrastructure

https://green-innovation.nedo.go.jp/project/building-next-generation-digital-infrastructure/

Rohm News Release Site

https://www.rohm.co.jp/news-detail?news-title=2026-04-02_news&defaultGroupId=false

※5 Epitaxial Growth

Epitaxial growth is a thin-film crystal growth process where a new crystal is grown on top of a substrate crystal. It enables the creation of high-quality semiconductor thin films with few defects.

※6 IGBT

Insulated Gate Bipolar Transistor (IGBT).