TMH Forms Strategic Partnership Through Investment in Patentix
TMH has invested in Patentix, a Ritsumeikan University spin-off, to form a strategic partnership for the practical application of 'r-GeO2', a next-generation power semiconductor material, aiming to solve power consumption issues in the AI era.
📋 Article Processing Timeline
- 📰 Published: April 1, 2026 at 18:00
- 🔍 Collected: April 1, 2026 at 09:36
- 🤖 AI Analyzed: April 22, 2026 at 05:29 (499h 53m after Collected)
TMH Inc. (hereinafter "TMH", Headquarters: Oita City, Oita Prefecture, President & CEO: Daisuke Enami) and Patentix Inc. (hereinafter "Patentix", Headquarters: Kusatsu City, Shiga Prefecture, President & CEO: Toyohiro Ibi) announce that they have formed a strategic partnership for the practical application of next-generation power semiconductor materials through TMH's investment in Patentix.
With the rapid evolution of AI and the increase in data processing volume, semiconductors are transforming into social infrastructure itself. At the same time, as increased power consumption becomes a challenge, particularly in the data center and mobility sectors, expectations are rising for next-generation power semiconductor materials that can significantly improve power efficiency.
r-GeO₂, which Patentix is researching and developing, is attracting attention as a new material that can address these challenges. Through this partnership, both companies will promote collaboration utilizing their respective strengths.
Partnership Background and Purpose
TMH has supported the stable operation of semiconductor manufacturing sites by promoting the realization of "non-stop manufacturing" through the sale of semiconductor manufacturing equipment, parts procurement, and repair services using its EC platform, as well as the sale of semiconductor manufacturing equipment utilizing engineering.
The "risk of stopping" in the semiconductor industry is not limited to the operational areas of equipment and parts. Structural issues arising from further upstream technological areas, such as power efficiency and material properties, are also important factors that affect the sustainability of manufacturing. TMH believes that in order to achieve "non-stop manufacturing" over the medium to long term, in addition to maintaining the supply chain, involvement in advanced technological fields that support the evolution of manufacturing is crucial.
Even in its medium- to long-term vision "Vision1000" (a plan targeting 100 billion yen in sales), investment and partnerships in advanced fields are positioned as one of the important strategies for business growth, and this initiative is a concrete implementation of that strategy.
On the other hand, Patentix, as a deep-tech venture originating from Ritsumeikan University, has been promoting the research and development of r-GeO₂, a next-generation power semiconductor material. To accelerate the practical application of r-GeO₂, not only material research but also practical knowledge regarding semiconductor manufacturing processes and mass production is essential. Patentix believes that collaboration with TMH's manufacturing site knowledge and supply chain network will be a driving force to advance the social implementation of r-GeO₂.
The alignment of this mutual awareness of issues and expectations led to the formation of this partnership.
About Patentix's Technology
In the power semiconductor field, research and discussions on the social implementation of materials such as silicon carbide (SiC) and gallium oxide (Ga₂O₃) have been progressing as next-generation materials to replace silicon (Si). Although both p-type and n-type conduction have been achieved with SiC, for material groups with a wider bandgap, including Ga₂O₃, the realization of p-type doping, which is essential for device design, remains a major challenge.
If both p-type and n-type conduction cannot be realized, not only is the degree of freedom in circuit design restricted, but limitations also arise in power conversion efficiency and device miniaturization.
Rutile-type germanium dioxide (r-GeO₂), which Patentix is researching and developing, is a new material attracting attention as a strong solution to this challenge. While it has an ultra-wide bandgap of approximately 4.68 eV, comparable to Ga₂O₃, it is theoretically possible to achieve both p-type and n-type conduction. Furthermore, it is said to have higher thermal conductivity and electron mobility than Ga₂O₃, making it a promising power semiconductor material.
With the rapid evolution of AI and the increase in data processing volume, semiconductors are transforming into social infrastructure itself. At the same time, as increased power consumption becomes a challenge, particularly in the data center and mobility sectors, expectations are rising for next-generation power semiconductor materials that can significantly improve power efficiency.
r-GeO₂, which Patentix is researching and developing, is attracting attention as a new material that can address these challenges. Through this partnership, both companies will promote collaboration utilizing their respective strengths.
Partnership Background and Purpose
TMH has supported the stable operation of semiconductor manufacturing sites by promoting the realization of "non-stop manufacturing" through the sale of semiconductor manufacturing equipment, parts procurement, and repair services using its EC platform, as well as the sale of semiconductor manufacturing equipment utilizing engineering.
The "risk of stopping" in the semiconductor industry is not limited to the operational areas of equipment and parts. Structural issues arising from further upstream technological areas, such as power efficiency and material properties, are also important factors that affect the sustainability of manufacturing. TMH believes that in order to achieve "non-stop manufacturing" over the medium to long term, in addition to maintaining the supply chain, involvement in advanced technological fields that support the evolution of manufacturing is crucial.
Even in its medium- to long-term vision "Vision1000" (a plan targeting 100 billion yen in sales), investment and partnerships in advanced fields are positioned as one of the important strategies for business growth, and this initiative is a concrete implementation of that strategy.
On the other hand, Patentix, as a deep-tech venture originating from Ritsumeikan University, has been promoting the research and development of r-GeO₂, a next-generation power semiconductor material. To accelerate the practical application of r-GeO₂, not only material research but also practical knowledge regarding semiconductor manufacturing processes and mass production is essential. Patentix believes that collaboration with TMH's manufacturing site knowledge and supply chain network will be a driving force to advance the social implementation of r-GeO₂.
The alignment of this mutual awareness of issues and expectations led to the formation of this partnership.
About Patentix's Technology
In the power semiconductor field, research and discussions on the social implementation of materials such as silicon carbide (SiC) and gallium oxide (Ga₂O₃) have been progressing as next-generation materials to replace silicon (Si). Although both p-type and n-type conduction have been achieved with SiC, for material groups with a wider bandgap, including Ga₂O₃, the realization of p-type doping, which is essential for device design, remains a major challenge.
If both p-type and n-type conduction cannot be realized, not only is the degree of freedom in circuit design restricted, but limitations also arise in power conversion efficiency and device miniaturization.
Rutile-type germanium dioxide (r-GeO₂), which Patentix is researching and developing, is a new material attracting attention as a strong solution to this challenge. While it has an ultra-wide bandgap of approximately 4.68 eV, comparable to Ga₂O₃, it is theoretically possible to achieve both p-type and n-type conduction. Furthermore, it is said to have higher thermal conductivity and electron mobility than Ga₂O₃, making it a promising power semiconductor material.