STMicroelectronics Announces New GaN Products to Enhance Power Efficiency for High-Performance Applications from AI Servers to Robotics
STMicroelectronics has introduced a new series of 700V PowerGaN (Gallium Nitride) semiconductors designed to improve power efficiency and density for high-performance applications such as AI servers and robotics. These products outperform traditional silicon technology, enabling system miniaturization and improved power conversion efficiency. Mass production has begun, with unit prices starting at approximately $0.63 for 1,000-unit quantities.
📋 Article Processing Timeline
- 📰 Published: June 2, 2026 at 02:00
- 🔍 Collected: June 1, 2026 at 17:20
- 🤖 AI Analyzed: June 1, 2026 at 17:42 (22 min after Collected)
STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has announced new Gallium Nitride (GaN)-based power semiconductors that deliver increased efficiency and power density for high-performance applications supporting electrification. The 700V PowerGaN products in the STPOWER portfolio address challenges such as the rising power consumption of AI servers and the need for higher-performance power conversion that exceeds the limits of traditional silicon technology.
ST's new PowerGaN products enable higher efficiency and power density in high-voltage power supplies. Designed for operation at 700V, they support reliable high-power operation and higher-frequency circuit configurations. Due to inherent PowerGaN characteristics such as low conduction losses, extremely low switching losses at high frequencies, and zero reverse recovery charge, these products enable system miniaturization, weight reduction, and lower operating temperatures. These characteristics are particularly critical for power semiconductors used in robotics, industrial power supplies, and smart grid converters for power generation, transmission, and storage.
Mario Aleo, Executive Vice President of ST's Power & Discrete Sub-Group, commented: "By adding these new 700V products to our PowerGaN portfolio, we are extending the benefits of Gallium Nitride technology to medium- and high-power applications. ST will continue to strengthen its GaN portfolio with additional voltage ratings and features to support future AI servers, humanoid robotics, industrial power supplies, and advanced consumer power applications, including home appliances."
Technical Information
The seven new GaN HEMTs added to ST's 700V PowerGaN series support a wide range of continuous current ratings from 6A to 29A and standard on-resistance (RDS(on)) from 53mΩ to 270mΩ. They also feature the extremely low internal capacitance and low gate charge inherent to GaN wide-bandgap technology, with all models significantly outperforming traditional silicon products in the Figure of Merit (FoM) of Qg × RDS(on).
Compliant with ST's reliability standards, the new 700V PowerGaN transistors offer expanded choices while delivering state-of-the-art performance and efficiency. They can directly replace MOSFETs in power conversion circuits and enable new circuit configurations at higher frequencies. Because they can operate at high switching frequencies, magnetic and passive components can be miniaturized, enabling more compact power stages and higher power density.
These products are widely supported by major EDA (Electronic Design Automation) libraries and toolchains and are available in proven surface-mount packages (DPAK, TO-LL, PowerFLAT). The TO-LL and PowerFLAT packages feature a Kelvin-source pin that separates the gate-control circuit from the main power path, providing high noise immunity, protecting the gate driver, and ensuring timing margins. The products announced are as follows:
SGT350R70GTK (6A, 270mΩ*): Available in a 3-pin DPAK package (6.10 x 6.60mm) with solderable terminals.
SGT070R70HTO (26A, 53mΩ*): Available in a leadless TO-LL package with thermally efficient drain/source connection terminals.
SGT080R70ILB (29A, 60mΩ*), SGT105R70ILB (21.7A, 80mΩ*), SGT140R70ILB (17A, 106mΩ*), SGT190R70ILB (11.5A, 138mΩ*), SGT240R70ILB (10A, 165mΩ*): All available in PowerFLAT 8x8 packages with solderable source pads for enhanced heat dissipation.
(*) Standard on-resistance (RDS(on))
The new 700V PowerGaN transistors are currently in mass production and are available from ST's eStore or authorized distributors. Unit prices for 1,000-unit quantities start from approximately $0.63 to $2.25.
For more information, please visit the website.
About STMicroelectronics
ST is a global semiconductor leader with approximately 49,000 employees, a comprehensive supply chain, and state-of-the-art manufacturing facilities. Working with over 200,000 customers and thousands of partners, ST develops semiconductor solutions and builds ecosystems that support business creation and a sustainable society. ST's technology enables smart mobility, efficient power and energy management, and the deployment of cloud-connected autonomous devices. ST is committed to achieving carbon neutrality by 2027, including all Scope 1 and 2 emissions and Scope 3 focus areas, and plans to use 100% renewable energy by the end of 2027. Further information can be found at http://www.st.com.
ST's new PowerGaN products enable higher efficiency and power density in high-voltage power supplies. Designed for operation at 700V, they support reliable high-power operation and higher-frequency circuit configurations. Due to inherent PowerGaN characteristics such as low conduction losses, extremely low switching losses at high frequencies, and zero reverse recovery charge, these products enable system miniaturization, weight reduction, and lower operating temperatures. These characteristics are particularly critical for power semiconductors used in robotics, industrial power supplies, and smart grid converters for power generation, transmission, and storage.
Mario Aleo, Executive Vice President of ST's Power & Discrete Sub-Group, commented: "By adding these new 700V products to our PowerGaN portfolio, we are extending the benefits of Gallium Nitride technology to medium- and high-power applications. ST will continue to strengthen its GaN portfolio with additional voltage ratings and features to support future AI servers, humanoid robotics, industrial power supplies, and advanced consumer power applications, including home appliances."
Technical Information
The seven new GaN HEMTs added to ST's 700V PowerGaN series support a wide range of continuous current ratings from 6A to 29A and standard on-resistance (RDS(on)) from 53mΩ to 270mΩ. They also feature the extremely low internal capacitance and low gate charge inherent to GaN wide-bandgap technology, with all models significantly outperforming traditional silicon products in the Figure of Merit (FoM) of Qg × RDS(on).
Compliant with ST's reliability standards, the new 700V PowerGaN transistors offer expanded choices while delivering state-of-the-art performance and efficiency. They can directly replace MOSFETs in power conversion circuits and enable new circuit configurations at higher frequencies. Because they can operate at high switching frequencies, magnetic and passive components can be miniaturized, enabling more compact power stages and higher power density.
These products are widely supported by major EDA (Electronic Design Automation) libraries and toolchains and are available in proven surface-mount packages (DPAK, TO-LL, PowerFLAT). The TO-LL and PowerFLAT packages feature a Kelvin-source pin that separates the gate-control circuit from the main power path, providing high noise immunity, protecting the gate driver, and ensuring timing margins. The products announced are as follows:
SGT350R70GTK (6A, 270mΩ*): Available in a 3-pin DPAK package (6.10 x 6.60mm) with solderable terminals.
SGT070R70HTO (26A, 53mΩ*): Available in a leadless TO-LL package with thermally efficient drain/source connection terminals.
SGT080R70ILB (29A, 60mΩ*), SGT105R70ILB (21.7A, 80mΩ*), SGT140R70ILB (17A, 106mΩ*), SGT190R70ILB (11.5A, 138mΩ*), SGT240R70ILB (10A, 165mΩ*): All available in PowerFLAT 8x8 packages with solderable source pads for enhanced heat dissipation.
(*) Standard on-resistance (RDS(on))
The new 700V PowerGaN transistors are currently in mass production and are available from ST's eStore or authorized distributors. Unit prices for 1,000-unit quantities start from approximately $0.63 to $2.25.
For more information, please visit the website.
About STMicroelectronics
ST is a global semiconductor leader with approximately 49,000 employees, a comprehensive supply chain, and state-of-the-art manufacturing facilities. Working with over 200,000 customers and thousands of partners, ST develops semiconductor solutions and builds ecosystems that support business creation and a sustainable society. ST's technology enables smart mobility, efficient power and energy management, and the deployment of cloud-connected autonomous devices. ST is committed to achieving carbon neutrality by 2027, including all Scope 1 and 2 emissions and Scope 3 focus areas, and plans to use 100% renewable energy by the end of 2027. Further information can be found at http://www.st.com.
FAQ
What is the significance for Taiwan's semiconductor industry?
As Taiwan is a major hub for AI server manufacturing, ST's GaN products provide critical components for Taiwanese suppliers to build more energy-efficient power units.