STMicroelectronics Announces High-Speed Switching GaN Drivers with Smart Protection for Motion Control and Power Conversion
STMicroelectronics released two new high-speed half-bridge gate drivers, STDRIVEG212 and STDRIVEG612, for GaN HEMTs, featuring smart protection and integrated LDOs for power and motion control.
📋 Article Processing Timeline
- 📰 Published: April 7, 2026 at 02:00
- 🔍 Collected: April 6, 2026 at 17:30
- 🤖 AI Analyzed: April 21, 2026 at 00:16 (342h 46m after Collected)
STMicroelectronics (NYSE: STM, hereafter ST) has announced two new high-speed half-bridge gate drivers that achieve the superior efficiency, thermal performance, and miniaturization of GaN (Gallium Nitride) in a wide range of power and motion control applications.
The "STDRIVEG212" and "STDRIVEG612" operate at high-side voltages of up to 220V and 600V, respectively, and provide a strictly controlled 5V gate drive signal to enhanced-mode GaN HEMTs. Both products integrate protection features such as high-side/low-side 5V linear regulators (LDOs), high-side bootstrap diodes, and under-voltage lockout (UVLO) into a compact QFN package.
By integrating a fast-starting voltage regulator, the driver's output voltage is stabilized, enabling precise gate control. It also incorporates a comparator that turns off both GaN HEMTs when overcurrent is detected. The smart shutdown (smartSD) function automatically maintains the off state until it cools down sufficiently, and reports of overcurrent, overtemperature, and UVLO can be obtained from the fault pin.
Both products are characterized by maximizing the benefits of GaN technology, especially in hard-switching applications such as motion control. The propagation delay time between the high side and low side is strictly matched to fit within just 50ns, and it can withstand a 5µs high-side startup time and ±200V/ns dV/dt transient voltage, allowing for increased rotational speeds.
The built-in LDO has a large current capacity and provides independent paths for the sink and source sides (up to 1.8A / 1.2Ω on the sink side and 0.8A / 4.0Ω on the source side). This gate driver output architecture allows circuit designers to individually set the turn-on and turn-off impedances, optimizing the respective dV/dt and dI/dt. This eliminates the need for a turn-off diode. As a result, it is possible to reduce the number of components, lower the gate loop inductance, speed up turn-off by increasing the margin, and prevent unnecessary inductive turn-on.
Both products feature logic input pins that can withstand up to 20V and dedicated shutdown pins that suppress power consumption during stoppage, simplifying system design and integration. In addition, evaluation boards compatible with both products "
The "STDRIVEG212" and "STDRIVEG612" operate at high-side voltages of up to 220V and 600V, respectively, and provide a strictly controlled 5V gate drive signal to enhanced-mode GaN HEMTs. Both products integrate protection features such as high-side/low-side 5V linear regulators (LDOs), high-side bootstrap diodes, and under-voltage lockout (UVLO) into a compact QFN package.
By integrating a fast-starting voltage regulator, the driver's output voltage is stabilized, enabling precise gate control. It also incorporates a comparator that turns off both GaN HEMTs when overcurrent is detected. The smart shutdown (smartSD) function automatically maintains the off state until it cools down sufficiently, and reports of overcurrent, overtemperature, and UVLO can be obtained from the fault pin.
Both products are characterized by maximizing the benefits of GaN technology, especially in hard-switching applications such as motion control. The propagation delay time between the high side and low side is strictly matched to fit within just 50ns, and it can withstand a 5µs high-side startup time and ±200V/ns dV/dt transient voltage, allowing for increased rotational speeds.
The built-in LDO has a large current capacity and provides independent paths for the sink and source sides (up to 1.8A / 1.2Ω on the sink side and 0.8A / 4.0Ω on the source side). This gate driver output architecture allows circuit designers to individually set the turn-on and turn-off impedances, optimizing the respective dV/dt and dI/dt. This eliminates the need for a turn-off diode. As a result, it is possible to reduce the number of components, lower the gate loop inductance, speed up turn-off by increasing the margin, and prevent unnecessary inductive turn-on.
Both products feature logic input pins that can withstand up to 20V and dedicated shutdown pins that suppress power consumption during stoppage, simplifying system design and integration. In addition, evaluation boards compatible with both products "