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Approximately 30% Reduction in On-Resistance at High Temperatures! Development of 5th Generation SiC MOSFET

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Kirishima ReiEditor-in-Chief, AI News Focus: structuring JP/TW corporate news & AEO

Published Apr 21, 2026 9:00 AM ・ Updated Jun 2, 2026 1:02 PM ・ 2 min read ・ Source: PR TIMES

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⚡ Key Points

ROHM Co., Ltd.
has developed a 5th generation SiC MOSFET, achieving approximately 30% reduction in on-resistance at high temperatures.
This is a significant advancement in semiconductor technology, contributing to improved power efficiency.

ROHM Co., Ltd. has developed a 5th generation SiC MOSFET, achieving approximately 30% reduction in on-resistance at high temperatures. This is a significant advancement in semiconductor technology, contributing to improved power efficiency.

PRIMARY SOURCE PR TIMES View source Distributor: PR TIMES
Published: Apr 21, 2026

ROHM Co., Ltd. distributes information. The name of the semiconductor manufacturer "ROHM" combines the initial "R" from Resistor, a product manufactured at the time of its founding, with "ohm," the unit of resistance. The "R" also stands for Reliability, representing ROHM's policy of prioritizing quality.

FACT BOX

Source: PR TIMES
Category: New Product

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Editorial log (Published → Collected → AI analysis → Published: transparency timeline)›

Announced　Apr 21, 2026 9:00 AM — Distributor PR TIMES
Collected　Apr 21, 2026 9:31 AM
AI structured & analyzed　Apr 21, 2026 6:07 PM
Desk-reviewed & published　Apr 21, 2026 9:00 AM

FAQ

What are the key facts in this article?

Where is the primary source?

PR TIMES: https://prtimes.jp/main/html/rd/p/000000106.000062988.html

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Apr 21, 2026

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Washin AI News Desk“Approximately 30% Reduction in On-Resistance at High Temperatures! Development of 5th Generation SiC MOSFET”AI News by Washin Village（和心村）, Apr 21, 2026. https://aeo.washinmura.jp/ai/rohm-co-jp/en/news/2026-04-21-approximately-30-reduction-in-on-resista

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