Resonac and CRIEPI Jointly Receive Ichimura Industrial Award for High-Productivity Manufacturing Technology of High-Quality SiC Epi-Wafers for Power Semiconductors
Resonac Corporation and the Central Research Institute of Electric Power Industry (CRIEPI) jointly received the 'Contribution Award' at the 58th Ichimura Industrial Award for their 'High-Productivity Manufacturing Technology of High-Quality SiC Epitaxial Wafers (Epi-Wafers) for Power Semiconductors.' This technology achieves both high quality and high productivity for SiC epi-wafers, contributing to energy saving in EVs and data centers.
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- 📰 Published: May 7, 2026 at 21:00
- 🔍 Collected: May 7, 2026 at 12:31
- 🤖 AI Analyzed: May 7, 2026 at 13:11 (39 min after Collected)
Resonac Corporation (Representative Director and CEO: Hidehito Takahashi, hereinafter Resonac) and the Central Research Institute of Electric Power Industry (President: Yoshio Hiraiwa, hereinafter CRIEPI) jointly received the 'Contribution Award' at the 58th Ichimura Industrial Award, hosted by the Ichimura Fresh New Technology Foundation, for their development of 'High-Productivity Manufacturing Technology of High-Quality SiC Epitaxial Wafers (Epi-Wafers) for Power Semiconductors.'
This technology achieves both high quality and high productivity for SiC (silicon carbide) epi-wafers, which are attracting attention as next-generation power semiconductor materials. Resonac has advanced its development based on joint research with CRIEPI, incorporating technical collaboration with equipment manufacturers and evaluations/feedback from device manufacturers and other customers, through a cumulative process of co-creation with various partners. It is expected to contribute to energy saving and higher efficiency in electric vehicles (EVs), data center power supplies, railways, and power control equipment.
■ Overview of the Award-Winning Technology
While CO₂ emission reduction is required as a measure against global warming, global electricity demand is expected to increase due to energy electrification and the expansion of AI. In this context, the importance of power semiconductors that enhance power conversion efficiency is growing, and SiC (silicon carbide) power semiconductors, which have properties exceeding the physical limits of conventional silicon (Si), are attracting attention. However, the widespread adoption of SiC power semiconductors faced challenges in improving the quality and reducing the cost of SiC epi-wafers (wafers with a SiC epitaxial film deposited on a SiC substrate).
Resonac and CRIEPI addressed this challenge by developing a manufacturing technology that achieves both high quality and high productivity for SiC epitaxial films. Conventionally, surface defects in the epitaxial film occurred due to by-products (deposits) generated inside the equipment during film formation falling onto the substrate as particles. This technology achieves the following four points through technological development aimed at improving quality:
① Reduced surface defects through equipment design that fundamentally suppresses this phenomenon.
② Established an interface control process technology that significantly reduces basal plane dislocations (BPD), which are intrinsic defects propagating from the substrate.
③ Achieved stable low defect rates at mass production levels by utilizing mass production inspection technology that accurately detects surface defects and basal plane dislocations, quantitatively understanding the causes of defect generation in mass production.
④ Improved productivity by shortening heating and cooling times through high-temperature transport and reduced heat capacity.
SiC Epi-Wafer Defect Map: Conventional Technology vs. This Technology
■ Effects of the Technology and Future Outlook
This technology improves the initial electrical characteristics yield and long-term reliability of SiC power devices, contributing to cost reduction of devices and ensuring the high reliability required for automotive and railway applications. This promotes the adoption of SiC in the power device field, leading to effects such as extended cruising range (improved power consumption) in EVs, and significant energy savings in data center power supply equipment, railways, and grid connection of renewable energy.
Moving forward, in addition to these fields, it is expected to contribute to the advancement of power infrastructure and improvement of energy utilization efficiency through expanded application to power control equipment handling larger capacities. Resonac will continue to contribute to the realization of a sustainable society through the advancement and stable supply of SiC-related technologies.
■ About the Ichimura Industrial Award
The Ichimura Industrial Award is an awards program hosted by the Ichimura Fresh New Technology Foundation, which honors engineers and researchers who have contributed to industrial development and solving social issues through the research and development of excellent domestic technologies and their practical application. Established in 1969, it recognizes innovative technologies that support Japanese manufacturing and initiatives that have significantly contributed to their social implementation.
(Ichimura Industrial Award Official Website) https://www.sgkz.or.jp/prize/industry/
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【About Resonac】
Resonac is a functional chemical manufacturer with a wide range of material and advanced material technologies, from upstream to downstream, covering semiconductors/electronic materials, mobility, innovation materials, and chemicals. It was established in January 2023 through the integration of Showa Denko and former Hitachi Chemical. The company name 'Resonac' is a combination of the English word 'RESONATE' and the 'C' from Chemistry. As a 'co-creative chemical company,' Resonac aims for sustainable growth and enhanced corporate value through co-creation. In fiscal year 2025, sales are projected to be approximately 1.3 trillion yen, with overseas sales accounting for 57%, and it operates globally with manufacturing and sales bases in over 20 countries and regions (as of January 2026). For more details, please visit the website.
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This technology achieves both high quality and high productivity for SiC (silicon carbide) epi-wafers, which are attracting attention as next-generation power semiconductor materials. Resonac has advanced its development based on joint research with CRIEPI, incorporating technical collaboration with equipment manufacturers and evaluations/feedback from device manufacturers and other customers, through a cumulative process of co-creation with various partners. It is expected to contribute to energy saving and higher efficiency in electric vehicles (EVs), data center power supplies, railways, and power control equipment.
■ Overview of the Award-Winning Technology
While CO₂ emission reduction is required as a measure against global warming, global electricity demand is expected to increase due to energy electrification and the expansion of AI. In this context, the importance of power semiconductors that enhance power conversion efficiency is growing, and SiC (silicon carbide) power semiconductors, which have properties exceeding the physical limits of conventional silicon (Si), are attracting attention. However, the widespread adoption of SiC power semiconductors faced challenges in improving the quality and reducing the cost of SiC epi-wafers (wafers with a SiC epitaxial film deposited on a SiC substrate).
Resonac and CRIEPI addressed this challenge by developing a manufacturing technology that achieves both high quality and high productivity for SiC epitaxial films. Conventionally, surface defects in the epitaxial film occurred due to by-products (deposits) generated inside the equipment during film formation falling onto the substrate as particles. This technology achieves the following four points through technological development aimed at improving quality:
① Reduced surface defects through equipment design that fundamentally suppresses this phenomenon.
② Established an interface control process technology that significantly reduces basal plane dislocations (BPD), which are intrinsic defects propagating from the substrate.
③ Achieved stable low defect rates at mass production levels by utilizing mass production inspection technology that accurately detects surface defects and basal plane dislocations, quantitatively understanding the causes of defect generation in mass production.
④ Improved productivity by shortening heating and cooling times through high-temperature transport and reduced heat capacity.
SiC Epi-Wafer Defect Map: Conventional Technology vs. This Technology
■ Effects of the Technology and Future Outlook
This technology improves the initial electrical characteristics yield and long-term reliability of SiC power devices, contributing to cost reduction of devices and ensuring the high reliability required for automotive and railway applications. This promotes the adoption of SiC in the power device field, leading to effects such as extended cruising range (improved power consumption) in EVs, and significant energy savings in data center power supply equipment, railways, and grid connection of renewable energy.
Moving forward, in addition to these fields, it is expected to contribute to the advancement of power infrastructure and improvement of energy utilization efficiency through expanded application to power control equipment handling larger capacities. Resonac will continue to contribute to the realization of a sustainable society through the advancement and stable supply of SiC-related technologies.
■ About the Ichimura Industrial Award
The Ichimura Industrial Award is an awards program hosted by the Ichimura Fresh New Technology Foundation, which honors engineers and researchers who have contributed to industrial development and solving social issues through the research and development of excellent domestic technologies and their practical application. Established in 1969, it recognizes innovative technologies that support Japanese manufacturing and initiatives that have significantly contributed to their social implementation.
(Ichimura Industrial Award Official Website) https://www.sgkz.or.jp/prize/industry/
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【About Resonac】
Resonac is a functional chemical manufacturer with a wide range of material and advanced material technologies, from upstream to downstream, covering semiconductors/electronic materials, mobility, innovation materials, and chemicals. It was established in January 2023 through the integration of Showa Denko and former Hitachi Chemical. The company name 'Resonac' is a combination of the English word 'RESONATE' and the 'C' from Chemistry. As a 'co-creative chemical company,' Resonac aims for sustainable growth and enhanced corporate value through co-creation. In fiscal year 2025, sales are projected to be approximately 1.3 trillion yen, with overseas sales accounting for 57%, and it operates globally with manufacturing and sales bases in over 20 countries and regions (as of January 2026). For more details, please visit the website.
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