Successful Deposition of Rutile Germanium Dioxide (r-GeO₂) Thin Film on 6-inch Si Substrate
Patentix Inc., in collaboration with JTEKT Thermo System Corporation, has successfully developed a new deposition system compatible with 6-inch substrates and deposited a thin film of rutile germanium dioxide (r-GeO₂), a next-generation power semiconductor material, on a 6-inch Si wafer. This marks a significant step towards realizing large-diameter substrates necessary for mass production of power devices, with sample prototyping targeted for 2027.
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- 📰 Published: May 13, 2026 at 18:00
- 🔍 Collected: May 13, 2026 at 09:31
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May 13, 2026
Patentix Inc.
Patentix Inc. (hereinafter referred to as "the Company"), in collaboration with JTEKT Thermo System Corporation, has successfully developed a new deposition system compatible with 6-inch substrates and deposited a thin film of rutile germanium dioxide (r-GeO₂), a next-generation power semiconductor material, on a 6-inch Si wafer.
[Background]
Rutile germanium dioxide (r-GeO₂) is a next-generation power semiconductor material with a larger bandgap (4.68eV) than silicon carbide (SiC) and gallium nitride (GaN), and is expected to reduce energy loss associated with power conversion.
For the practical application of r-GeO₂ power devices, it is essential to realize large-diameter r-GeO₂ substrates of 6 inches or more that are compatible with power device production lines. The Company has been advancing research and development of deposition technology, including developing its unique deposition method called "PhantomSVD method" suitable for r-GeO₂ deposition and achieving single-crystal r-GeO₂ film deposition over the entire surface of TiO₂ substrates. However, the PhantomSVD method made it difficult to enlarge the substrate diameter.
[Achievements]
To enable larger substrate diameters, the Company developed elemental technologies for deposition equipment and a new deposition method suitable for large-diameter substrates called the "Chimney method." Furthermore, since last year, in collaboration with JTEKT Thermo System Corporation (Headquarters: Tenri City, Nara Prefecture), an industrial heat treatment equipment manufacturer, we have developed and manufactured a 6-inch substrate-compatible deposition system employing the Chimney method. This time, we successfully deposited an r-GeO₂ thin film on a 6-inch Si wafer using the developed 6-inch substrate-compatible deposition system. The appearance of the fabricated substrate is shown in the figure.
Figure: Appearance of GeO₂ on Si substrate with r-GeO₂ thin film deposited on 6-inch Si substrate
The surface of the r-GeO₂ film deposited on the Si substrate is mirror-like, indicating that the deposited r-GeO₂ film surface is smooth. Also, since no noticeable interference fringes were observed within the substrate surface, it is believed that a relatively uniform film thickness distribution was achieved across the substrate surface.
Previously, due to the limitations of the equipment and method, the conventional PhantomSVD method could only achieve r-GeO₂ film deposition on small fragment substrates with a maximum size of 20mm square. The newly developed deposition system represents a significant step forward in realizing 6-inch sized substrates necessary for the mass production of power devices.
[Future Outlook]
To achieve early market introduction, Patentix Inc., in collaboration with JTEKT Thermo System Corporation, will continue to improve the quality of r-GeO₂ films on 6-inch GeO₂ on Si substrates and plans to conduct sample prototyping of 6-inch GeO₂ on Si substrates in 2027.
[Acknowledgements]
Part of the results reported this time were achieved with the support of the "Reiwa 7th Year Shiga Prefecture Small and Medium-sized Enterprise New Technology Development Project Subsidy."
End
Keywords:
Patentix Inc.
Patentix Inc. (hereinafter referred to as "the Company"), in collaboration with JTEKT Thermo System Corporation, has successfully developed a new deposition system compatible with 6-inch substrates and deposited a thin film of rutile germanium dioxide (r-GeO₂), a next-generation power semiconductor material, on a 6-inch Si wafer.
[Background]
Rutile germanium dioxide (r-GeO₂) is a next-generation power semiconductor material with a larger bandgap (4.68eV) than silicon carbide (SiC) and gallium nitride (GaN), and is expected to reduce energy loss associated with power conversion.
For the practical application of r-GeO₂ power devices, it is essential to realize large-diameter r-GeO₂ substrates of 6 inches or more that are compatible with power device production lines. The Company has been advancing research and development of deposition technology, including developing its unique deposition method called "PhantomSVD method" suitable for r-GeO₂ deposition and achieving single-crystal r-GeO₂ film deposition over the entire surface of TiO₂ substrates. However, the PhantomSVD method made it difficult to enlarge the substrate diameter.
[Achievements]
To enable larger substrate diameters, the Company developed elemental technologies for deposition equipment and a new deposition method suitable for large-diameter substrates called the "Chimney method." Furthermore, since last year, in collaboration with JTEKT Thermo System Corporation (Headquarters: Tenri City, Nara Prefecture), an industrial heat treatment equipment manufacturer, we have developed and manufactured a 6-inch substrate-compatible deposition system employing the Chimney method. This time, we successfully deposited an r-GeO₂ thin film on a 6-inch Si wafer using the developed 6-inch substrate-compatible deposition system. The appearance of the fabricated substrate is shown in the figure.
Figure: Appearance of GeO₂ on Si substrate with r-GeO₂ thin film deposited on 6-inch Si substrate
The surface of the r-GeO₂ film deposited on the Si substrate is mirror-like, indicating that the deposited r-GeO₂ film surface is smooth. Also, since no noticeable interference fringes were observed within the substrate surface, it is believed that a relatively uniform film thickness distribution was achieved across the substrate surface.
Previously, due to the limitations of the equipment and method, the conventional PhantomSVD method could only achieve r-GeO₂ film deposition on small fragment substrates with a maximum size of 20mm square. The newly developed deposition system represents a significant step forward in realizing 6-inch sized substrates necessary for the mass production of power devices.
[Future Outlook]
To achieve early market introduction, Patentix Inc., in collaboration with JTEKT Thermo System Corporation, will continue to improve the quality of r-GeO₂ films on 6-inch GeO₂ on Si substrates and plans to conduct sample prototyping of 6-inch GeO₂ on Si substrates in 2027.
[Acknowledgements]
Part of the results reported this time were achieved with the support of the "Reiwa 7th Year Shiga Prefecture Small and Medium-sized Enterprise New Technology Development Project Subsidy."
End
Keywords: