Successful Growth of Rutile-type Germanium Dioxide (r-GeO₂) Single-Crystal Film on Si Substrate
Patentix Inc., in collaboration with JTEKT Thermo System Co., Ltd., has successfully developed a new deposition apparatus compatible with 6-inch wafers and achieved the growth of single-crystal rutile-type germanium dioxide (r-GeO₂) film on a Si substrate, a next-generation power semiconductor material.
📋 Article Processing Timeline
- 📰 Published: May 13, 2026 at 18:00
- 🔍 Collected: May 13, 2026 at 09:31
- 🤖 AI Analyzed: May 13, 2026 at 10:25 (53 min after Collected)
May 13, 2026
Patentix Inc.
Patentix Inc. (hereinafter referred to as "the Company"), in collaboration with JTEKT Thermo System Co., Ltd., has successfully developed and manufactured a new 6-inch compatible film deposition apparatus, and has succeeded in depositing a single-crystal film of rutile-type germanium dioxide (r-GeO₂), a next-generation power semiconductor material, on a Si substrate.
【Background】
Rutile-type germanium dioxide (r-GeO₂) is a next-generation power semiconductor material with a larger bandgap (4.68eV) than silicon carbide (SiC) and gallium nitride (GaN), and is expected to reduce energy loss associated with power conversion.
For the practical application of r-GeO₂ power devices, it is essential to realize large-diameter r-GeO₂ substrates of 6 inches or more, compatible with power device production lines. The Company has been advancing research and development of film deposition technology, including developing its unique PhantomSVD method suitable for r-GeO₂ deposition, and achieving single-crystal r-GeO₂ film deposition across the entire surface of r-TiO₂ substrates. In a press release in July 2025, the Company announced the successful fabrication of r-GeO₂ film on a Si substrate, and this time, it has succeeded in depositing a single-crystal r-GeO₂ film, which is indispensable for power device applications.
【Achievements】
In the previous announcement, we established the "foundational technology" of r-GeO₂ film deposition on a Si substrate. However, to realize power devices that do not break down even when high voltage is applied in the OFF state and do not allow leakage current, it is essential to fabricate devices using a single-crystal r-GeO₂ film where atoms are regularly arranged.
This time, in collaboration with JTEKT Thermo System Co., Ltd., we manufactured a new 6-inch substrate compatible film deposition apparatus that adopts our independently developed deposition method (named "Chimney method"). By using the manufactured "Chimney method" deposition apparatus, we succeeded in depositing a single-crystal r-GeO₂ film on a Si substrate, which has a significantly different crystal structure and lattice constant from r-GeO₂.
As shown in the figure, analysis by the Electron Backscatter Diffraction (EBSD) method confirmed that the entire r-GeO₂ film deposited on the Si substrate has the same crystal orientation, meaning that heteroepitaxial growth of single-crystal r-GeO₂ film on the Si substrate was successful.
Figure: EBSD image of r-GeO₂ single-crystal film deposited on a Si substrate via a conductive buffer layer
【Results of EBSD Analysis】
1. **Consistent Crystal Orientation**: Confirmed that the crystal axes are highly aligned throughout the film, with no grain boundaries typically seen in polycrystalline structures.
2. **High Inverse Pole Figure (IPF) Mapping Accuracy**: Shows uniform hue across the entire measurement area, indicating high crystal quality.
The Company employs a conductive buffer layer to achieve r-GeO₂ crystal film deposition on a Si substrate, which has a significantly different crystal structure. By adopting a conductive buffer layer, it is expected that a common vertical device structure for power devices can be easily realized.
By combining the conductive buffer layer technology suitable for vertical devices with the accumulated r-GeO₂ deposition technology, we aim to realize "GeO₂ on Si substrate" and achieve the social implementation of next-generation semiconductor substrate materials that enable both low manufacturing costs and high-performance vertical power devices.
【Future Outlook】
To achieve early market entry, Patentix plans to prototype large-diameter r-GeO₂ substrates of 6 inches, compatible with power device production lines, using this single-crystal r-GeO₂ film deposition technology. Furthermore, we will advance the quality improvement of r-GeO₂ single-crystal films and proceed with the prototyping and evaluation of fully vertical Schottky Barrier Diodes (SBDs) and Field-Effect Transistors (FETs) using GeO₂ on Si substrates.
End
Keywords:
Patentix Inc.
Patentix Inc. (hereinafter referred to as "the Company"), in collaboration with JTEKT Thermo System Co., Ltd., has successfully developed and manufactured a new 6-inch compatible film deposition apparatus, and has succeeded in depositing a single-crystal film of rutile-type germanium dioxide (r-GeO₂), a next-generation power semiconductor material, on a Si substrate.
【Background】
Rutile-type germanium dioxide (r-GeO₂) is a next-generation power semiconductor material with a larger bandgap (4.68eV) than silicon carbide (SiC) and gallium nitride (GaN), and is expected to reduce energy loss associated with power conversion.
For the practical application of r-GeO₂ power devices, it is essential to realize large-diameter r-GeO₂ substrates of 6 inches or more, compatible with power device production lines. The Company has been advancing research and development of film deposition technology, including developing its unique PhantomSVD method suitable for r-GeO₂ deposition, and achieving single-crystal r-GeO₂ film deposition across the entire surface of r-TiO₂ substrates. In a press release in July 2025, the Company announced the successful fabrication of r-GeO₂ film on a Si substrate, and this time, it has succeeded in depositing a single-crystal r-GeO₂ film, which is indispensable for power device applications.
【Achievements】
In the previous announcement, we established the "foundational technology" of r-GeO₂ film deposition on a Si substrate. However, to realize power devices that do not break down even when high voltage is applied in the OFF state and do not allow leakage current, it is essential to fabricate devices using a single-crystal r-GeO₂ film where atoms are regularly arranged.
This time, in collaboration with JTEKT Thermo System Co., Ltd., we manufactured a new 6-inch substrate compatible film deposition apparatus that adopts our independently developed deposition method (named "Chimney method"). By using the manufactured "Chimney method" deposition apparatus, we succeeded in depositing a single-crystal r-GeO₂ film on a Si substrate, which has a significantly different crystal structure and lattice constant from r-GeO₂.
As shown in the figure, analysis by the Electron Backscatter Diffraction (EBSD) method confirmed that the entire r-GeO₂ film deposited on the Si substrate has the same crystal orientation, meaning that heteroepitaxial growth of single-crystal r-GeO₂ film on the Si substrate was successful.
Figure: EBSD image of r-GeO₂ single-crystal film deposited on a Si substrate via a conductive buffer layer
【Results of EBSD Analysis】
1. **Consistent Crystal Orientation**: Confirmed that the crystal axes are highly aligned throughout the film, with no grain boundaries typically seen in polycrystalline structures.
2. **High Inverse Pole Figure (IPF) Mapping Accuracy**: Shows uniform hue across the entire measurement area, indicating high crystal quality.
The Company employs a conductive buffer layer to achieve r-GeO₂ crystal film deposition on a Si substrate, which has a significantly different crystal structure. By adopting a conductive buffer layer, it is expected that a common vertical device structure for power devices can be easily realized.
By combining the conductive buffer layer technology suitable for vertical devices with the accumulated r-GeO₂ deposition technology, we aim to realize "GeO₂ on Si substrate" and achieve the social implementation of next-generation semiconductor substrate materials that enable both low manufacturing costs and high-performance vertical power devices.
【Future Outlook】
To achieve early market entry, Patentix plans to prototype large-diameter r-GeO₂ substrates of 6 inches, compatible with power device production lines, using this single-crystal r-GeO₂ film deposition technology. Furthermore, we will advance the quality improvement of r-GeO₂ single-crystal films and proceed with the prototyping and evaluation of fully vertical Schottky Barrier Diodes (SBDs) and Field-Effect Transistors (FETs) using GeO₂ on Si substrates.
End
Keywords: