Nikkiso Wins '32nd Semiconductor of the Year 2026' for the First Time

Nikkiso Co., Ltd.'s '3D Sinter' won the Excellence Award in the Semiconductor Manufacturing Equipment category at the '32nd Semiconductor of the Year 2026.' Its high-quality bonding technology using a unique 3D press method contributes to the mass production of SiC semiconductors for AI and EVs.
新製品NQ 89/100出典:PR Times

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  • 📰 Published: June 11, 2026 at 23:31
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Nikkiso Co., Ltd. (hereinafter 'Nikkiso') announced that its 'High-Productivity Pressure Sintering System 3D Sinter for SiC Power Semiconductors' received the 'Excellence Award' in the Semiconductor Manufacturing Equipment category at the 'Semiconductor of the Year 2026.' The award ceremony was held on Wednesday, June 10, 2026, at Tokyo Big Sight, where the organizer, Sangyo Times, presented the award and winning companies gave presentations. This is Nikkiso's first time receiving this award.

'Semiconductor of the Year' is selected by votes from reporters of the Electronic Device Industry News published by Sangyo Times, based on criteria such as development novelty, mass production setup, social impact, and future potential.

■ About the winning product '3D Sinter'

This is a device that joins (sinters) SiC chips and substrates using heat and pressure in the bonding process of SiC power semiconductors onto substrates. Its feature lies in the three-dimensional press using a special gel-like pressure medium based on Nikkiso's proprietary '3D press method,' which allows for uniform, simultaneous bonding of chips and substrates with different heights. Compared to traditional metal press methods that apply pressure on a flat plane, this enables the production of more efficient and high-quality modules.

Detailed information and videos about the features of the 3D Sinter are available on the Nikkiso website.

https://www.nikkiso.co.jp/products/industrial/sintering/3d.html

■ Future Outlook

With the recent rapid expansion of AI and EV usage, demand for SiC power semiconductors, which have superior pressure resistance and the ability to stably flow large currents compared to conventional semiconductors, is increasing. Nikkiso will continue to strive to develop manufacturing equipment that meets customer needs to further improve the productivity and quality of SiC power semiconductors.

■ About 'Semiconductor of the Year'

The 32nd 'Semiconductor of the Year' is selected in three categories: Semiconductor Devices, Semiconductor Manufacturing Equipment, and Electronic Materials for Semiconductors. This year, candidate products and technologies were selected from new products (including version upgrades) announced between April 2025 and March 2026 and introduced in the Electronic Device Industry News, including recommendations from the newspaper's reporters and open applications, and winners were chosen through strict reporter voting.

FAQ

日機装の「3Dシンター」は何をする装置ですか?

SiCパワー半導体の基板接合工程において、SiCチップと基板を熱と圧力で接合(シンタリング)する装置です。

「3Dシンター」の技術的な特長は何ですか?

独自技術の「3Dプレス方式」を採用した特殊ゲル状加圧媒体により、高さが異なるチップや基板を均一に一括接合できる点です。

今回の受賞の意義は何ですか?

産業タイムズ社主催の「半導体・オブ・ザ・イヤー2026」の半導体製造装置部門において、日機装として初の優秀賞受賞となります。

半導体・オブ・ザ・イヤーの選考基準は何ですか?

開発の斬新性、量産体制の構築、社会に与えたインパクト、将来性などの基準に基づき、電子デバイス産業新聞の記者による投票で選出されます。

SiCパワー半導体の需要が増えている理由は何ですか?

昨今のAI(人工知能)やEV(電気自動車)の利用拡大に伴い、従来の半導体より耐圧性に優れ、大電流を安定して流せる特性が求められているためです。