Taiwanese-American Startup NEO Completes POC for New Memory Tech, Receives Investment from Stan Shih
NEO Semiconductor, a Silicon Valley startup founded by Andy Hsu, completed a POC for its next-gen 3D X-DRAM and secured strategic investment from Acer founder Stan Shih, aiming to revolutionize AI memory.
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- 📰 Published: April 23, 2026 at 20:19
- 🔍 Collected: April 23, 2026 at 20:32 (12 min after Published)
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(Central News Agency, Reporter Wu Chia-hao, Taipei, 23rd) NEO Semiconductor, a memory design company founded by Silicon Valley Taiwanese-American entrepreneur Andy Hsu (Hsu Fu-chang), announced today that its next-generation memory technology, 3D X-DRAM, has completed Proof of Concept (POC), marking an important milestone toward next-generation high-capacity memory solutions.
NEO simultaneously announced that it has received strategic investment led by Acer Group founder Stan Shih, which will be used for subsequent technological research and development and productization promotion.
The test chip this time was jointly developed by NEO and the Industry-Academia Innovation School of National Yang Ming Chiao Tung University (NYCU), with manufacturing and testing completed at the Taiwan Semiconductor Research Institute (TSRI) of the National Applied Research Laboratories.
NEO issued a press release today explaining that 3D X-DRAM uses a vertically integrated memory cell architecture, breaking through traditional memory capacity expansion limits. It is expected to be applied in fields such as High Bandwidth Memory (HBM), Double Data Rate (DDR) memory, as well as Artificial Intelligence (AI) and High-Performance Computing (HPC).
Compared to the current HBM method which requires stacking Dynamic Random-Access Memory (DRAM) chips layer by layer, NEO describes its innovative approach as akin to a "mille-feuille" (thousand-layer cake)—closer to a monolithically formed 3D structure, which helps improve integration efficiency and optimize costs.
Stan Shih stated that he looks forward to leveraging the foundation and strength of Taiwan's semiconductor industry to commercialize this innovative technology. This will bridge the gap in Taiwan's design capabilities within the memory industry, allowing Taiwan to exert a greater influence globally in the memory sector.
Andy Hsu pointed out that traditional DRAM is facing the dual challenges of capacitor scaling limits and soaring capacity demands. The 3D X-DRAM utilizes a capacitor-less architecture combined with mature 3D NAND processes, providing a high-capacity and scalable 3D vertical stacking solution. NEO is currently in active discussions with leading global memory and semiconductor companies regarding potential joint development opportunities.
Founded in 2012 and headquartered in San Jose, California, USA, NEO focuses on the development of next-generation memory and AI computing technologies and has currently accumulated over 38 US patents. (Editor: Chang Liang-chih) 1150423
NEO simultaneously announced that it has received strategic investment led by Acer Group founder Stan Shih, which will be used for subsequent technological research and development and productization promotion.
The test chip this time was jointly developed by NEO and the Industry-Academia Innovation School of National Yang Ming Chiao Tung University (NYCU), with manufacturing and testing completed at the Taiwan Semiconductor Research Institute (TSRI) of the National Applied Research Laboratories.
NEO issued a press release today explaining that 3D X-DRAM uses a vertically integrated memory cell architecture, breaking through traditional memory capacity expansion limits. It is expected to be applied in fields such as High Bandwidth Memory (HBM), Double Data Rate (DDR) memory, as well as Artificial Intelligence (AI) and High-Performance Computing (HPC).
Compared to the current HBM method which requires stacking Dynamic Random-Access Memory (DRAM) chips layer by layer, NEO describes its innovative approach as akin to a "mille-feuille" (thousand-layer cake)—closer to a monolithically formed 3D structure, which helps improve integration efficiency and optimize costs.
Stan Shih stated that he looks forward to leveraging the foundation and strength of Taiwan's semiconductor industry to commercialize this innovative technology. This will bridge the gap in Taiwan's design capabilities within the memory industry, allowing Taiwan to exert a greater influence globally in the memory sector.
Andy Hsu pointed out that traditional DRAM is facing the dual challenges of capacitor scaling limits and soaring capacity demands. The 3D X-DRAM utilizes a capacitor-less architecture combined with mature 3D NAND processes, providing a high-capacity and scalable 3D vertical stacking solution. NEO is currently in active discussions with leading global memory and semiconductor companies regarding potential joint development opportunities.
Founded in 2012 and headquartered in San Jose, California, USA, NEO focuses on the development of next-generation memory and AI computing technologies and has currently accumulated over 38 US patents. (Editor: Chang Liang-chih) 1150423