What are 2D material transistors?

Next-gen transistors using atomically thin materials like MoS₂ as channels, enabling further scaling and lower power consumption.

A Belgian R&D hub that enables industry-wide collaboration on advanced semiconductor technologies through neutral, open innovation.

When will this technology be commercialized?

Expected to be integrated into advanced logic processes around 2030; currently in the technology development phase.

imec Collaborates with TSMC and ASML to Advance 2D Material Transistor Development

Published Jun 16, 2026 4:52 PM ・ Updated Jun 19, 2026 2:07 AM ・ 4 min read ・ Source: CNA (Central News Agency)

Belgian microelectronics research center (imec) has announced, together with TSMC and ASML, an innovative, robust, and scalable 12-inch wafer integration roadmap for n-type and p-type field-effect transistors (FETs) using 2D materials, marking a key step toward next-generation semiconductor technology.

(Central News Agency reporter Chang Chien-chung, Hsinchu, June 16) The Belgian microelectronics research center (imec) today announced at the IEEE JSAP Symposium on VLSI Technology and Circuits, in collaboration with TSMC and ASML, an innovative, robust, and scalable 12-inch wafer integration roadmap for n-type and p-type field-effect transistors (FETs) using 2D materials.

According to imec’s press release, this marks the first demonstration of miniaturized nFETs (using molybdenum disulfide as the channel material) and pFETs (tungsten disulfide or tungsten diselenide) with a 50-nanometer gate pitch, achieving favorable current-voltage characteristics. This represents a critical advancement in transitioning 2D material transistors from the laboratory to the fab, with potential applications in ultra-scaled logic devices, back-end-of-line (BEOL) processes, and backside power delivery.

Dr. Kevin Chan, Deputy Director of Technology Research and Chief Technology Officer at TSMC, stated, "Research collaboration provides a vital driving force for advancing semiconductor innovation. By focusing on de-risking and accelerating the transition of technologies from 'lab to fab,' we ensure that groundbreaking discoveries—especially innovative channel materials—can be rapidly and effectively integrated into advanced manufacturing, ultimately delivering best-in-class solutions."

ASML noted that 2D transition metal dichalcogenide (TMD) materials hold promise for enabling smaller, higher-performance transistors beyond silicon. However, current 2D material channel devices demonstrated using 12-inch wafer processes are relatively large and employ older lithography techniques.

ASML stated that, leveraging the higher resolution provided by extreme ultraviolet (EUV) lithography, they have successfully fabricated TMD transistors with channel lengths as short as 28 nanometers, with pitches compatible with the most advanced transistor nodes. (Edited by Chang Chun-mao) 1150616

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Source: CNA (Central News Agency)
Category: Partnership
Organizations: imec / ASML

imec Collaborates with TSMC and ASML to Advance 2D Material Transistor Development

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