Applied Materials Announces Deposition Systems for Logic Chips in the Angstrom Era
Applied Materials has introduced two new semiconductor manufacturing systems, Precision™ Selective Nitride PECVD and Trillium™ ALD. Designed for 2nm nodes and beyond, these systems enable atomic-level precision deposition for GAA transistors, significantly boosting power efficiency and performance for AI computing.
📋 Article Processing Timeline
- 📰 Published: April 9, 2026 at 21:00
- 🔍 Collected: April 9, 2026 at 12:30
- 🤖 AI Analyzed: April 20, 2026 at 08:28 (259h 58m after Collected)
- Semiconductor manufacturing equipment forming atomic-scale microstructures for 3D Gate-All-Around transistors
- Precision™ Selective Nitride PECVD reduces parasitic capacitance while maintaining shallow trench isolation integrity, significantly improving chip power efficiency
- Trillium™ ALD surrounds silicon nanosheets with complex metal gate stacks, enabling transistors optimized for a wide range of AI computing applications
- Multiple leading foundries/logic manufacturers utilize the new equipment for processes 2nm and beyond
Applied Materials, Inc. (Nasdaq AMAT, headquartered in Santa Clara, California, USA, President and CEO Gary E. Dickerson), the leader in materials engineering solutions for the semiconductor industry, announced on April 8 (local time) two new semiconductor manufacturing systems designed to form the extremely fine structures of the world's most advanced logic chips. By controlling material deposition with atomic-level precision, the company maintains the pace of global AI infrastructure expansion through the mass production of faster, more power-efficient transistors.
Driven by the surging demand for AI computing, the semiconductor industry is pushing the limits of scaling to extract higher energy efficiency performance from each of the hundreds of billions of transistors packed into a processor chip. To meet this challenge, the world's leading logic manufacturers are introducing new Gate-All-Around (GAA) transistors for 2nm nodes and beyond. While the transition to GAA significantly improves performance at the same power consumption, the process complexity to achieve this increases dramatically. Forming the intricate 3D structures inside GAA transistors requires over 500 steps, many of which demand unprecedented precision, repeatability, and control in deposition technologies within strict tolerances approaching atomic dimensions.
The two semiconductor manufacturing systems announced today by Applied Materials leverage materials innovation to form the highly complex microstructures used in GAA transistors. These new technologies enable the deposition of critical metals and insulating materials that largely dictate the performance and power efficiency of advanced chips.
Prabu Raja, President of the Semiconductor Products Group at Applied Materials, stated: "The industry is entering an era of non-linear, rapid change, and traditional lithography-driven chip scaling is no longer sufficient. Leading-edge logic nodes have reached the angstrom level, and chip performance and power efficiency now depend heavily on materials. Applied Materials, leveraging its foundational lead in materials engineering, is pic
- Precision™ Selective Nitride PECVD reduces parasitic capacitance while maintaining shallow trench isolation integrity, significantly improving chip power efficiency
- Trillium™ ALD surrounds silicon nanosheets with complex metal gate stacks, enabling transistors optimized for a wide range of AI computing applications
- Multiple leading foundries/logic manufacturers utilize the new equipment for processes 2nm and beyond
Applied Materials, Inc. (Nasdaq AMAT, headquartered in Santa Clara, California, USA, President and CEO Gary E. Dickerson), the leader in materials engineering solutions for the semiconductor industry, announced on April 8 (local time) two new semiconductor manufacturing systems designed to form the extremely fine structures of the world's most advanced logic chips. By controlling material deposition with atomic-level precision, the company maintains the pace of global AI infrastructure expansion through the mass production of faster, more power-efficient transistors.
Driven by the surging demand for AI computing, the semiconductor industry is pushing the limits of scaling to extract higher energy efficiency performance from each of the hundreds of billions of transistors packed into a processor chip. To meet this challenge, the world's leading logic manufacturers are introducing new Gate-All-Around (GAA) transistors for 2nm nodes and beyond. While the transition to GAA significantly improves performance at the same power consumption, the process complexity to achieve this increases dramatically. Forming the intricate 3D structures inside GAA transistors requires over 500 steps, many of which demand unprecedented precision, repeatability, and control in deposition technologies within strict tolerances approaching atomic dimensions.
The two semiconductor manufacturing systems announced today by Applied Materials leverage materials innovation to form the highly complex microstructures used in GAA transistors. These new technologies enable the deposition of critical metals and insulating materials that largely dictate the performance and power efficiency of advanced chips.
Prabu Raja, President of the Semiconductor Products Group at Applied Materials, stated: "The industry is entering an era of non-linear, rapid change, and traditional lithography-driven chip scaling is no longer sufficient. Leading-edge logic nodes have reached the angstrom level, and chip performance and power efficiency now depend heavily on materials. Applied Materials, leveraging its foundational lead in materials engineering, is pic