AndTech to Hold Zoom Seminar on Aluminum Nitride-Based Semiconductors for High-Voltage Power Devices on July 23

AndTech Co., Ltd. (Headquarters: Kawasaki City, Kanagawa Prefecture; President and Representative Director: Masao Suyama; hereinafter "AndTech"), as part of its Zoom lecture series for R&D support, will launch a course titled "Aluminum Nitride Next-Generation Power Semiconductors" featuring leading experts to address the growing need for solutions in next-generation power semiconductor challenges.

This course will explain and introduce the structural characteristics and basics of ferroelectricity of the new material "ScAlN," which has polarization surpassing AlGaN and the potential to achieve high-density 2DEG while maintaining lattice matching with GaN, research progress on aluminum nitride-based Schottky barrier diodes, and the characteristics of high heat dissipation/nitride materials and their application to power devices.

The course is scheduled to begin on July 23, 2026.

Details: https://andtech.co.jp/seminars/1f149c45-4b39-676e-82ef-064fb9a95405

Live Streaming / Web Seminar Overview
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Theme: Development Trends and Future Prospects of Aluminum Nitride (AlN)-Based Semiconductor Substrates, Diodes, Ferroelectric, and High Heat Dissipation Materials for Next-Generation Ultra-High Voltage, High-Power Devices
Date and Time: July 23, 2026 (Thursday) 13:00-16:35
Participation Fee: 55,000 yen (tax included) * Materials will be distributed electronically.
URL: https://andtech.co.jp/seminars/1f149c45-4b39-676e-82ef-064fb9a95405
Web Distribution Format: Zoom (URL will be sent after registration)

Seminar Content Structure
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-Program and Lecturers-
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Part 1: Creation of Ferroelectric Nitride Semiconductors and Their Application to Electronic Devices
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Lecturer: Associate Professor Atsushi Kobayashi, Faculty of Advanced Engineering, Tokyo University of Science
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Part 2: Research Progress on Aluminum Nitride-Based Schottky Barrier Diodes
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Lecturer: Lecturer Takuya Maeda, Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo
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Part 3: High Heat Dissipation Nitride Materials and Their Application to Power Devices
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Lecturer: Group Leader Yukihiro Kanechika, Heat Dissipation Application Group, New Business Headquarters, Tokuyama Corporation

Knowledge and Technical Issues Covered in This Seminar
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- Basics of the new material "ScAlN," which has polarization surpassing AlGaN and the potential to achieve high-density 2DEG while maintaining lattice matching with GaN, including its structural characteristics and ferroelectricity.
- Research progress on aluminum nitride-based Schottky barrier diodes.
- Insulating, high thermal conductivity nitride fillers and their application technologies.

Seminar Format
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This will be a live streaming seminar using the web conferencing tool "Zoom."
Details will be provided after registration.

About AndTech Co., Ltd.
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We provide research and development support services offering information to clients involved in R&D across a wide range of fields, including chemicals, materials, electronics, automotive, energy, medical devices, food packaging, and building materials.
Our company has a team of top-tier lecturers and offers various services, starting with "technical training courses and seminars," followed by "lecturer dispatch," "publishing," "consultant dispatch," "market trend research," "business matching," and "business development consulting."
We listen to our clients' voices and provide effective support for entering desired new business areas and markets.
https://andtech.co.jp/

AndTech Technical Training Course List
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We hold numerous web-based lecture seminars by top lecturers every month.
https://andtech.co.jp/seminars/search

AndTech Book List
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We publish books on carefully selected, high-demand themes.
https://andtech.co.jp/books

AndTech Consulting Service
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We dispatch highly specialized technical consultants with extensive experience and proven track records.
https://andtech.co.jp/business-consulting

Inquiries Regarding This Matter
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AndTech Co., Ltd. Public Relations/PR Contact: Aoki
Email: pr●andtech.co.jp (Please replace ● with @)

Full Program Details (Please take a look if you are interested in the details)
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Part 1: Creation of Ferroelectric Nitride Semiconductors and Their Application to Electronic Devices
[Lecture Overview]
In recent years, the application of nitride semiconductor devices such as high electron mobility transistors (HEMTs) has been advancing in the fields of high-frequency communication and power electronics, and there is a demand for even higher output and efficiency. To form a high-density two-dimensional electron gas (2DEG) in a GaN channel, ingenuity in the barrier layer is required. However, conventional AlGaN has a limitation on the critical film thickness due to lattice mismatch with GaN, which defines the upper limit of 2DEG density. Therefore, the introduction of new barrier layer materials that generate large polarization based on a different principle is strongly desired.
This lecture will focus on the new material "ScAlN," which has polarization surpassing AlGaN and the potential to achieve high-density 2DEG while maintaining lattice matching with GaN, explaining its basics including structural characteristics and ferroelectricity. It will also introduce the latest information on our sputtering-based ScAlN epitaxial thin film growth technology, including evaluation of crystal structure and lattice constants over a wide composition range, and attempts at epitaxial growth on GaN HEMT structures. Furthermore, it will cover the importance of impurity reduction and polarity control for device application, and points to note for improving electrical properties through optimization of the growth process (such as higher growth temperatures and post-annealing treatment).
[Program]
1. Introduction: Next-generation nitride semiconductor devices
2. Characteristics of ScAlN: Piezoelectricity and ferroelectricity
3. Crystal structure of ScAlN: Theory and current status of wurtzite structure stability and phase transition to layered structure
4. ScAlN thin film fabrication technology by sputtering: Optimization of film formation conditions and control of metal/nitrogen supply ratio
5. Epitaxial growth on GaN